View HBAT54X_425576.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2004.08.26 Page No. : 1/4
HBAT54 Series
Description
Silicon Schottky Barrier Double Diodes * HBAT54: Single Diode, also available as double diodes. * HBAT54A: Common Anode. * HBAT54C: Common Cathode. * HBAT54S: Series Connected.
Diagram:
3 3
SOT-23
1
2
1
2
HBAT54
3
HBAT54A
3
Features
These diodes feature very low turn-on voltage and fast switching. There is a PN junction guard ring against excessive voltage such as electronics attic discharges protects these devices.
1 2 1 2
HBAT54C
HBAT54S
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature ............................................................................................................................. -65~+125 C Junction Temperature .................................................................................................................................... +125 C * Maximum Power Dissipation Total Power Dissipation (TA=25C) ............................................................................................................... 230 mW * Maximum Voltages and Currents (TA=25C) Repetitive Peak Reverse Voltage ....................................................................................................................... 30 V Forward Continuous Current ......................................................................................................................... 200 mA Repetitive Peak Forward Current ................................................................................................................. 300 mA Surge Forward Current (tp<1s)...................................................................................................................... 600 mA
Electrical Characteristics (TA=25C)
Characteristic Reverse breakdown Voltage Symbol V(BR) VF(1) VF(2) Forward Voltage VF(3) VF(4) VF(5) Reverse Current Total Capacitance Reverse Recovery Time IR CT Trr IR=10uA IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V VR=1V, f=1MHz IF=IR=10mA, RL=100, measured at IR=1mA Condition Min. 30 Max. 240 320 400 500 1000 2.0 10 5 Unit V mV mV mV mV mV uA pF nS
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Forward Current & Forward Voltage
250
Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2004.08.26 Page No. : 2/4
Diode Capacitance & Reverse-Biased Voltage
100
200
150
Diode Capacitance-Cd (pF)
0 200 400 600 800 1000
Forward Current-IF (mA)
10
100
50
0
1 0.1 1 10 100
Forward Voltage-VF (mV)
Reverse Biased Voltage-VR (V)
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
A L
Series Code
(None,2,3,4)
Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2004.08.26 Page No. : 3/4
L4
3
Pb Free Mark
BS
1 2
Pb-Free: " " (Note) Normal: None
HBAT54: (L4), HBAT54A: (L42), HBAT54C: (L43), HBAT54S: (L44) Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Pin Style: 1.Anode 2.Cathode 3.Common Connection Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
V
G
DIM A B C D G H J K L S V
Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25
Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65
*: Typical, Unit: mm
C D H
3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N
K
J
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile
tP TP Ramp-up TL Tsmax Temperature tL
Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2004.08.26 Page No. : 4/4
Critical Zone TL to TP
Tsmin tS Preheat
Ramp-down
25 t 25oC to Peak Time
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices.
Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes
o o o
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes
Peak temperature 245 C 5 C
o o
Dipping time 5sec 1sec 5sec 1sec
260 C +0/-5 C
o
o
HBAT54, HBAT54A, HBAT54C, HBAT54S
HSMC Product Specification

▲Up To Search▲

Price & Availability of HBAT54X

	To Download HBAT54X Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .